vs-20etf0...pbf series, vs-20etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 1 document number: 94096 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fast soft recovery r ectifier diode, 20 a features ? glass passivated pellet chip junction ? 150 c max operating junction temperature ? low forward voltage drop and short reverse recovery time ? designed and qualified according to jedec ? -jesd 47 ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications these devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted emi should be met. description the vs-20etf0... fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. ? the glass passivation ensures st able reliable operation in the most severe te mperature and power cycling conditions. product summary package to-220ac i f(av) 20 a v r 200 v, 400 v, 600 v v f at i f 1.3 v i fsm 300 a t rr 60 ns t j max. 150 c diode variation single die snap factor 0.6 anode 1 2 3 cathode base cathode to-220ac 1 2 3 major ratings and characteristics symbol characteristics values units v rrm range 200 to 600 v i f(av) sinusoidal waveform 20 a i fsm 300 t rr 1 a, 100 a/s 60 ns v f 10 a, t j = 25 c 1.2 v t j range -40 to +150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-20etf02pbf, VS-20ETF02-M3 200 300 5 vs-20etf04pbf, vs-20etf04-m3 400 500 vs-20etf06pbf, vs-20etf06-m3 600 700 absolute maximum ratings parameter symbol test co nditions values units maximum average forward current i f(av) t c = 97 c, 180 conduction half sine wave 20 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 250 10 ms sine pulse, no voltage reapplied 300 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 316 a 2 s 10 ms sine pulse, no voltage reapplied 442 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 4420 a 2 ? s
vs-20etf0...pbf series, vs-20etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 2 document number: 94096 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 20 a, t j = 25 c 1.3 v forward slope resistance r t t j = 150 c 12.5 m ? threshold voltage v f(to) 0.9 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 5.0 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 20 a pk ? 100 a/s ? 25 c 160 ns reverse recovery current i rr 10 a reverse recovery charge q rr 1.25 c snap factor s typical 0.6 i fm t rr dir dt i rm(rec) q rr t t a t b thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j , t stg -40 to +150 c maximum thermal resistance, ? junction to case r thjc dc operation 0.9 c/w maximum thermal resistance, ? junction to ambient r thja 62 typical thermal resistance, ? case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ac 20etf02 20etf04 20etf06
vs-20etf0...pbf series, vs-20etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 3 document number: 94096 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rati ng characteristics fig. 2 - current rati ng characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 80 70 150 06 maximum allowable case temperature (c) average forward current (a) 4 28 110 10 22 130 90 140 120 30 60 90 120 180 20etf.. series r thjc (dc) = 0.9 k/w conduction angle 12 14 16 18 20 100 ? 90 80 150 025 maximum allowable case temperature (c) average forward current (a) 15 530 110 35 120 100 10 20 130 140 20etf.. series r thjc (dc) = 0.9 k/w 30 60 90 120 180 dc ? conduction period 10 0 35 0 maximum average forward power loss (w) average forward current (a) 20 25 25 20 10 15 5 5 15 30 rms limit 20etf.. series t j = 150 c conduction angle 180 120 90 60 30 ? 5 0 45 0 maximum average forward power loss (w) average forward current (a) 30 25 35 30 10 10 20 35 5 15 25 15 20 40 180 120 90 60 30 dc rms limit 20etf.. series t j = 150 c ? conduction period 300 50 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and w ith rated v rrm applied follo w ing surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 20etf.. series 400 150 50 0.001 0.01 1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 350 550 maximum non-repetiti v e surge current v ersus pulse train duration. initial t j = 150 c no v oltage reapplied rated v rrm reapplied 20etf.. series 0.1 500 450
vs-20etf0...pbf series, vs-20etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 4 document number: 94096 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 012345 instantaneous forward current (a) instantaneous forward voltage (v) 100 20etf.. series t j = 25 c t j = 150 c 0.20 0.05 0 0 200 400 600 800 1000 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.10 0.15 20etf.. series t j = 25 c i fm = 1 a i fm = 5 a i fm = 10 a i fm = 20 a i fm = 30 a 0.5 0.3 0 0 200 400 600 800 1000 t rr - typical reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.2 20etf.. series t j = 150 c i fm = 30 a i fm = 1 a i fm = 20 a i fm = 10 a i fm = 5 a 0.4 70 0 0 200 400 600 800 1000 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 30 50 40 60 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 20etf.. series t j = 25 c 20 10 100 60 0 0 200 400 600 800 1000 i rr - typical reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 20 40 80 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 20etf.. series t j = 150 c
vs-20etf0...pbf series, vs-20etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 5 document number: 94096 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - recovery curre nt characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 3.0 0 0 200 400 600 800 1000 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1.0 2.0 4.0 0.5 1.5 2.5 3.5 i fm = 1 a i fm = 5 a i fm = 10 a i fm = 20 a i fm = 30 a 20etf.. series t j = 25 c 10 6 0 0 200 400 600 800 1000 q rr - typical reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 8 20etf.. series t j = 150 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 1 3 5 7 9 1 10 1 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 0.01 single pulse 20etf.. series steady state v alue (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
vs-20etf0...pbf series, vs-20etf0...-m3 series www.vishay.com vishay semiconductors revision: 11-feb-16 6 document number: 94096 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-20etf02pbf 50 1000 antistatic plastic tube VS-20ETF02-M3 50 1000 antistatic plastic tube vs-20etf04pbf 50 1000 antistatic plastic tube vs-20etf04-m3 50 1000 antistatic plastic tube vs-20etf06pbf 50 1000 antistatic plastic tube vs-20etf06-m3 50 1000 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95221 part marking information to-220ac pbf www.vishay.com/doc?95224 to-220ac -m3 www.vishay.com/doc?95068 2 - current rating (20 = 20 a) 3 - circuit configuration: e = single diode 4 - package: t = to-220ac 5 - type of silicon: f = fast soft recovery rectifier 6 - voltage code x 100 = v rrm 7 02 = 200 v 04 = 400 v 06 = 600 v device code 6 2 4 3 5 7 20 e t f 06 pbf 1 vs- - vishay semiconductors product 1 pbf = lead (pb)-free and rohs-compliant -m3 = halogen-free, rohs-compliant, and terminations lead (pb)-free - environmental digit
document number: 95221 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-220ac outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and tolerancin g as per asme y14.5m-1994 (2) lead dimension and fini sh uncontrolled in l1 (3) dimension d, d1 and e do not in clude mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are m easured at the outermost extrem es of the plastic body (4) dimension b1, b3 and c1 apply to base metal only (5) controlling dimension: inches (6) thermal pad contour optional with in dimensions e, h1, d2 and e1 (7) dimension e2 x h1 define a zone where stamping and singulation irregularities are allowed (8) outline conforms to jedec to-220, d2 (minimum) where dimensions are derived from the actual package outline symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.25 4.65 0.167 0.183 e1 6.86 8.89 0.270 0.350 6 a1 1.14 1.40 0.045 0.055 e2 - 0.76 - 0.030 7 a2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105 b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208 b1 0.38 0.97 0.015 0.038 4 h1 6.09 6.48 0.240 0.255 6, 7 b2 1.20 1.73 0.047 0.068 l 13.52 14.02 0.532 0.552 b3 1.14 1.73 0.045 0.068 4 l1 3.32 3.82 0.131 0.150 2 c 0.36 0.61 0.014 0.024 l3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 l4 0.76 1.27 0.030 0.050 2 d 14.85 15.25 0.585 0.600 3 ? p 3.54 3.73 0.139 0.147 d1 8.38 9.02 0.330 0.355 q 2.60 3.00 0.102 0.118 d2 11.68 12.88 0.460 0.507 6 ? 90 to 93 90 to 93 e 10.11 10.51 0.398 0.414 3, 6 13 2 d d1 h1 q detail b c a b l e1 lead tip l4 l3 e e2 ? p 0.015 a b mm 0.014 a b mm s eating plane c a2 a1 a a a lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220ac (6) (6) (7) (6) (7) view a - a e1 (6) d2 (6) h1 thermal pad e detail b d l1 d 123 c c 2 x b2 2 x b
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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